Ni doped ZnO thin films for diluted magnetic semiconductor materials
نویسندگان
چکیده
Ni doped ZnO (Zn1 xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1 xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminescence (PL). A higher magnetic moment was acquired from the annealed Zn1 xNixO film doped with 5 at.% Ni, which was attributed to a better preferred orientation from a primary phase Ni:ZnO in the film. A relatively more pronounced ZnO(002) peak observed from the Zn1 xNixO film doped with 5 at.% Ni indicated a good crystallinity of the film, which was attributed to a lower level of Ni content in the film as well as the Ni ions substituted for the Zn ions to form Ni:ZnO. A slight shift in ZnO(002) peak position for the 5 and 10 at.% Ni doped ZnO films could be due to the distortion of the ZnO lattice caused by the Ni ion substituents for the Zn ions. 2007 Elsevier B.V. All rights reserved. PACS: 75.50.Pp; 75.50.Ss; 75.70. I; 78.55. m
منابع مشابه
Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
A growthwindow for theMn effusion cell temperature (TMn) is demonstrated for epitaxialMn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at TMn1⁄4700 1C. The Curie temperature of these MnZnO diluted magnetic semiconductor thin films is above roomtemper...
متن کاملEffects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films
XPS depth profiles were used to investigate the effects of rapid thermal annealing under varying conditions on the structural, magnetic and optical properties of Ni-doped ZnO thin films. Oxidization of metallic Ni from its metallic state to two-valence oxidation state occurred in the film annealed in air at 600 C, while reduction of Ni2þ from its two-valence oxidation state to metallic state oc...
متن کاملHigh-temperature ferromagnetism in Ni2+-doped ZnO aggregates prepared from colloidal diluted magnetic semiconductor quantum dots.
Ferromagnetism with T(c)>350 K is observed in the diluted magnetic semiconductor Ni(2+):ZnO synthesized from solution. Whereas colloidal Ni(2+):ZnO nanocrystals are paramagnetic, their aggregation gives rise to robust ferromagnetism. The appearance of ferromagnetism is attributed to the increase in domain volumes and the generation of lattice defects upon aggregation. The unusual temperature de...
متن کاملPerformance Evaluation of ZnO Based Rare Earth Element Doped Thin Films
In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin fil...
متن کاملThe Effect of Nickel Doping on Calculation of the Optical Gap Energy and Urbach Energy in ZnO Thin Films
Investigation of new calculate depends on the controlled optical properties of nanomaterials. Understanding the growth mechanism and growth parameters of nanostructured materials is essential. ZnO is one of the most important semiconductor materials for its semiconducting characteristics. In the present paper, we investigated a new model by theoretical methods; it is based on correlation from t...
متن کامل